Modelling of High-Frequency Capacitance-Voltage Characteristics of MOS Structures
Abstract
This research explores the parameters and characteristics of Metal-Oxide-Semiconductor (MOS) structures. By employing equation systems that describe the processes at the metal-oxide-semiconductor interface, the capacitance-voltage (C-V) characteristics for RF probing signals were modelled. The study examined the dependence of volume charge density and specific capacitance on surface potential and gate-substrate voltage for p-type and n-type structures.
The calibration technology of the measurement setup was detailed, and enhancements to the calibration process were proposed. Sample preparation techniques for measurement were described, with the gate area measured at 1 mm². The technological stages of scribing and soldering microwires to the MOS structure were completed.
C-V characteristics for p-type and n-type MOS structure samples were obtained, and the dopant concentration and flat-band voltage were measured. A comparison between experimental and theoretical C-V characteristics revealed that a non-zero flat-band voltage causes both a shift and an extension of the C-V characteristic along the voltage axis. The total charge at the interface and within the dielectric was also quantified.
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